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Er emission from Er-doped Si-rich silicon oxide layers synthesised by hydrogen reactive magnetron co-sputtering
Authors:F. Gourbilleau   P. Choppinet   C. Dufour   M. Levalois   R. Madelon   C. Sada   G. Battaglin  R. Rizk
Affiliation:a LERMAT, CNRS 2149, ISMRA, 6 Bd Maréchal Juin, F-14050, Caen, Cedex, France;b INFM and Physics Department, Università di Padova, Via Marzolo 8, 35131, Padova, Italy;c INFM and Dipartimento di Chimica Fisica, Università di Venezia, Dorsoduro, 30123, Venezia, Italy
Abstract:Among the systems used as optical amplifiers, we propose an original way to elaborate photoluminescent materials. The method is based on the reactive RF magnetron co-sputtering of SiO2 and Er2O3 controlled by the hydrogen dilution rate in the plasma gas. The relationship between the photoluminescence properties and the structural characteristics is evidenced through the variation of two parameters in the deposition process: the hydrogen partial pressure within the plasma and the sputtered surface ratio of Er2O3 and SiO2 targets.
Keywords:Photoluminescence   Erbium   Sputtering   Silicon   Nanograin
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