Ga2O3薄膜的光致发光及激光烧蚀产物的分布

采用脉冲激光沉积技术在氧气氛中制备了Ga2O3薄膜。X射线衍射表明薄膜属于β单斜晶系，薄膜的颗粒在纳米量级；原子力显微镜显示随着氧气压强的增加，薄膜颗粒增大。测定了薄膜的光致发光，发现沉积时氧气压强的增加可以提高 纯Ga2O3薄膜的发光强度，且峰位红移。Ga2O3靶物质中掺杂少量的CeO2后所得到的薄膜，其发光强度可以明显地增加。此外，还利用发光光谱技术研究了由激光 烧蚀所产生的羽状物中Ga原子或离子的氧化反应。

Photoluminescence of Ga2O3 Thin Film and Characterization of Laser Ablated Species

Ga2O3 thin films have been fabricated using 355nm pulsed laser deposition.XRD and AFM measurements showed that the films mainly consist of nanosized polycrystalline β-monoclinic Ga2O3.Photoluminescence(PL)spectra of the thin films deposited at various oxygen pressure were measured.With the increase of oxygen pressure,the PL intensity increased along with the wavelength red-shifts of the emission band,which may be due to the increase of the grain size.CeO2 dopant can enhance the PL intensity and influence the PL spectrum obviously.Additionally,the time-resolved emission spectrometry was used to characterize the ablated species generated from the laser ablation of Ga2O3.Gallium oxide species in the plume increased with increasing the oxygen pressure and the laser fluence.