| 退火后无应变Ga1-xInxNyAs-y/GaAs量子阱的带隙 |
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| 引用本文： | 文于华,唐吉玉,赵传阵,吴靓臻,孔蕴婷,汤莉莉,刘超,吴利锋,李顺方,陈俊芳. 退火后无应变Ga1-xInxNyAs-y/GaAs量子阱的带隙[J]. 半导体学报, 2008, 29(1): 105-109 |
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| 作者姓名： | 文于华 唐吉玉 赵传阵 吴靓臻 孔蕴婷 汤莉莉 刘超 吴利锋 李顺方 陈俊芳 |
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| 作者单位： | 华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006;华南师范大学物理与电信工程学院,广州 510006 |
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| 基金项目： | 国家自然科学基金(项目号:10575039) |
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| 摘 要： | 针对快速热退火引起的N最近邻原子环境的变化,建立了热平衡态下Ga1-xInxNyAs-y合金中各二元化合键的统计分布模型.并将理论计算得到的N周围平均In原子数r引入到BAC经验模型中,对退火后的Ga1-xInxNyAs-y体材料带隙进行了计算.最后,利用讨论BAC模型中电子波函数边界条件的方法,计算了无应变Ga1-xInxNyAs-y/GaAs量子阱的带隙.
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| 关 键 词： | GaInNAs/GaAs 量子阱 带隙 退火 |
| 文章编号： | 0253-4177（2008）01-0105-05 |
| 收稿时间： | 2007-06-24 |
| 修稿时间： | 2007-07-31 |
Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing |
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| Wen Yuhu,Tang Jiyu,Zhao Chuanzhen,Wu Liangzhen,Kong Yunting,Tang Lili,Liu Chao,Wu Lifeng,Li Shunfang and Chen Junfang. Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing[J]. Chinese Journal of Semiconductors, 2008, 29(1): 105-109 |
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| Authors: | Wen Yuhu Tang Jiyu Zhao Chuanzhen Wu Liangzhen Kong Yunting Tang Lili Liu Chao Wu Lifeng Li Shunfang Chen Junfang |
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| Affiliation: | College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China;College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China |
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| Abstract: | According to the annealing-induced changes of an N-centered nearest-neighbor (NN) environment in Ga1-xInxNyAs-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state.Then,the parameter r,the calculated number of NN In atoms per N atom,is introduced into the BAC empirical model.Finally,bandgap energies in strain-free Ga1-xInxNyAs-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model. |
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| Keywords: | GaInNAs/GaAs quantum well bandgap energy annealing |
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