Range Distribution Parameters and Electronic Stopping Power for ^19F^＋ Ions in SnO2, Indium-Tin Oxide, AgGaSe2 and AgGaS2： Comparison Between Theory and Experiment

Range distributions of fluorine for ^19F^ implantation into SnO2, indium-tin oxide, AgGaS2 and AgGaSe2 aremeasured by using the ^19F(p, αγ)^16O resonant nuclear reactions. The electronic stopping cross sections for ^19F ions in these materials are derived from the measured range distributions. These experimental results are compared with those obtained from the newest version of stopping and range computer code, SRIM2003. Thevalues of projected range predicted by the SRIM2003 agree well with the measured values for AgGaS2 andAgGaSe2 substrates. However, the values given by the SRIM2003 substantially deviate from the experimentalvalues for the oxide materials SnO2 and ITO.