| 复连通二维电子系统电阻量子化的理论解释 |
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| 引用本文： | 彭建平,周世勋. 复连通二维电子系统电阻量子化的理论解释[J]. 物理学报, 1990, 39(9): 1461-1464 |
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| 作者姓名： | 彭建平 周世勋 |
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| 作者单位： | 复旦大学物理系,上海200433 |
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| 基金项目： | 国家自然科学基金;国家高等教育委员会基金资助的课题 |
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| 摘 要： | 本文论证,单连通的二维电子体系,在低温、强磁场等条件下,其两端电阻精确地等于量子化霍耳电阻h/fe2,f为Landau填充因数。并以此为基础,解释了复连通二维电子系统的电阻量子化。关键词：
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| 关 键 词： | 二维 电子系统 电阻 量子化 |
| 收稿时间： | 1989-11-17 |
EXPLANATION OF THE QUANTIZED MAGNETORESIS-TANCE IN MULTPLY CONNECTED PERIMETERS IN TWO-DIMENSION ELECTRON SYSTEMS |
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| PENG JIAN-PING and ZHOU SHI-XUN. EXPLANATION OF THE QUANTIZED MAGNETORESIS-TANCE IN MULTPLY CONNECTED PERIMETERS IN TWO-DIMENSION ELECTRON SYSTEMS[J]. Acta Physica Sinica, 1990, 39(9): 1461-1464 |
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| Authors: | PENG JIAN-PING and ZHOU SHI-XUN |
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| Abstract: | We explain the quantized magnetoresistance in multiply connected perimeters in two-dimensional systems observed by Fang and Stiles based in terms of a model which states that the two-terminal resistance of a two-dimensional electron system in a quantizing magnetic field in any open geometry is given by h/fe2, where f is the Landau filling factor. |
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