| 脉冲激光沉积GaN薄膜的结构和光学特性研究 |
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| 引用本文： | 童杏林,郑启光,于本海,秦应雄,席再军,路庆华. 脉冲激光沉积GaN薄膜的结构和光学特性研究[J]. 光子学报, 2003, 32(12): 1506-1509 |
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| 作者姓名： | 童杏林 郑启光 于本海 秦应雄 席再军 路庆华 |
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| 作者单位： | 1. 激光技术国家重点实验室,华中科技大学,武汉,430074
2. 上海交通大学,分析测试中心,上海,200030 |
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| 基金项目： | 激光技术国家重点实验室 (华中科技大学 )开放基金资助(资助号 :2 0 0 0 0 0 0 4 )项目 |
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| 摘 要： | 采用准分子脉冲激光,在Si(111)衬底上生长了带有AlN缓冲层的GaN薄膜, 利用X射线衍射(XRD)、原子力显微镜(AFM)和光致发光光谱(PL)等测试手段研究了不同沉积温度所生长的GaN薄膜结构特征和光学性能.研究表明:沉积温度影响GaN薄膜结构和光学性能,黄带发射峰主要与晶体缺陷有关.在400～700℃沉积范围内随着温度升高,GaN薄膜结构和光学性能提高.
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| 关 键 词： | GaN薄膜 脉冲激光沉积 直流放电辅助 结构 光致发光光谱 |
| 收稿时间： | 2002-01-28 |
| 修稿时间： | 2002-01-28 |
Optical and Structural Properties of GaN Films Grown on Si Substrate by Excimer Pulsed Laser Deposition |
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| Tong Xinglin ,Zheng Qiguang ,Yu Benhai ,Qin Yingxiong ,Xi Zaijun ,Lu Qinghua The State Key Laboratory of Laser Technology,Huazhong University of Science and Technology,Wuhan Instrumental Analysis , Test Center,Shanghai Jiaotong University,Shanghai. Optical and Structural Properties of GaN Films Grown on Si Substrate by Excimer Pulsed Laser Deposition[J]. Acta Photonica Sinica, 2003, 32(12): 1506-1509 |
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| Authors: | Tong Xinglin Zheng Qiguang Yu Benhai Qin Yingxiong Xi Zaijun Lu Qinghua The State Key Laboratory of Laser Technology Huazhong University of Science Technology Wuhan Instrumental Analysis & Test Center Shanghai Jiaotong University Shanghai |
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| Affiliation: | Tong Xinglin 1,Zheng Qiguang 1,Yu Benhai 1,Qin Yingxiong 1,Xi Zaijun 1,Lu Qinghua 2 1 The State Key Laboratory of Laser Technology,Huazhong University of Science and Technology,Wuhan 430074 2 Instrumental Analysis & Test Center,Shanghai Jiaotong University,Shanghai 200030 |
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| Abstract: | GaN films have been grown on Si(111)substrates with a thin AlN buffer layer using a KrF excimer pulsed laser deposition(PLD)assisted by direct current discharge. The microstructure and optical properties of the GaN films were characterized by X-ray diffraction(XRD),atomic force microcopy(AFM)and photoluminescence(PL)spectroscopy. It is found that the structural and optical properties greatly depend on the substrate temperature during growth. The yellow band emission is mainly due to the defect caused by low growth temperature. The structural quality and optical properties of GaN films were improved by increasing the growth temperature from 400℃ to 700℃. |
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| Keywords: | GaN films Pulsed laser deposition Direct current discharge Structure Photoluminescence |
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