| 描述光伏效应的新解析模型 |
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| 引用本文： | 江厚满,程湘爱.描述光伏效应的新解析模型[J].强激光与粒子束,2002,14(2):177-180. |
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| 作者姓名： | 江厚满 程湘爱 |
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| 作者单位： | 国防科技大学理学院, 长沙 410073 |
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| 摘 要： | 对陆启生等人提出的描述光伏效应的解析模型涉及的边界条件进行了讨论，提出了一个适用性更宽的解析模型。通过对新模型、陆的模型以及另一个解析模型的比较，对前两个模型能够描述光伏型光电探测器在强光辐照时的信号饱和效应的原因进行了解释。
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| 关 键 词： | 光伏效应 解析模型 信号饱和效应 |
| 文章编号： | 1001-4322(2002)02-0177-04 |
| 收稿时间： | 2001/4/28 |
| 修稿时间： | 2001年4月28日 |
New analytic model describing photovoltaic effect |
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| JIANG Hou man,CHENG Xiang ai.New analytic model describing photovoltaic effect[J].High Power Laser and Particle Beams,2002,14(2):177-180. |
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| Authors: | JIANG Hou man CHENG Xiang ai |
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| Institution: | College of Science, National University of Defense Technology, Changsha 410073 |
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| Abstract: | A new analytic model describing photovoltaic effect in photovoltaic infrared detectors is put forward, which disposes the relation between photoelectron concentrations at the two sides of the depletion region of a p n junction in common cases while Lu Qisheng's analytic model does in special case. By comparison among the new model, Lu's model and another analytic model, it is explained why the former two models, different from the latter, can explain the signal saturation effect which is observed in the photovoltaic infrared detectors under laser irradiation. |
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| Keywords: | photovoltaic effect analytic model p n junction signal saturation effect photovoltaic infrared detector laser |
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