Planar graphene-narrow-gap semiconductor-graphene heterostructure |
| |
| Authors: | P V Ratnikov A P Silin |
| |
| Institution: | (1) Key Laboratory of Functional Polymer Materials and Center for Nanoscale Science &; Technology, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China;(2) Key Laboratory of Display Materials and Photoelectric Devices, Institute of Material Physics, Tianjin University of Technology, Tianjin, 300384, China |
| |
| Abstract: | A planar heterostructure composed of two graphene films between which a narrow-gap semiconductor ribbon is inserted was studied. It was shown that the Klein paradox is absent when conical points of the graphene Brillouin zone are in the band gap of a narrow-gap semiconductor. There is an energy range dependent on the angle of incidence, in which an above-barrier decaying solution can exist. Thereby, such a heterostructure is a filter transmitting particles in a certain range of angles of incidence on the potential barrier. The applicability of such a heterostructure as a gate is discussed. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
