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Oxidation studies of hydrogenated amorphous silicon
Authors:SR Kelemen  Y Goldstein  B Abeles
Institution:Exxon Research and Engineering Company, P. O. Box 45, Linden, New Jersey 07036, USA
Abstract:Hydrogenated amorphous silicon surfaces, atomically clean and subsequently oxidized to up to 20 Å oxide thickness, were studied using AES and UPS. The oxidation was made in O2 in the pressure range 10?9 Torr to 5 atm and at 23 and 300°C. The oxidation rate at 23°C was found to be the same as that of crystalline silicon while at 300°C it was appreciably faster. Changes in the d N(E)dE AES Si LVV line shape near 80 eV upon oxidation could be correlated to changes in the silicon-oxygen bonding level observed in UPS. The detailed line shape of the AES Si LVV transition indicates that at 300°C a more homogeneous oxide is produced than at 23°C.
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