Facetting,steps and reconstruction on GaAs (001) |
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| Authors: | L. Däweritz |
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| Affiliation: | Zentralinstitut für Elektronenphysik der Akademie der Wissenschaften der DDR, Mohrenstrasse 40/41, DDR-1080 Berlin, DDR |
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| Abstract: | Assuming that facets develop on a microscopic scale during MBE growth of macroscopically flat GaAs (001) surfaces, models were made for the different structures found for surfaces prepared under UHV conditions as reported in the literature. The deduced surface structures are discussed in connection with data available from experimental work on the composition and structure of the reconstructed surface. |
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