About the existence of an antiferromagnetic ground state for the (1× 1) structure of Si(111) |
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Authors: | M. Lannoo G. Allan |
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Affiliation: | Laboratoire de Physique des Solides, LA CNRS 253. ISEN, 3 Rue François Buës, F-59046 Lille Cedex, France |
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Abstract: | A recent proposal by Duke and Ford (Surface Sci. 111 (1981) L685) of strong correlations at the metastable (1× 1) Si(111) surface is shown to be equivalent to our earlier theory of magnetic or charge instabilities at this surface. It is recalled how this can be discussed from a perturbation analysis. Estimates of the Coulomb parameter U are given using recent theoretical results for dangling bond states in silicon. They support the conclusion of an antiferromagnetic 2 × 1 ground state for this surface. |
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