首页 | 本学科首页   官方微博 | 高级检索  
     检索      


About the existence of an antiferromagnetic ground state for the (1× 1) structure of Si(111)
Authors:M Lannoo  G Allan
Institution:Laboratoire de Physique des Solides, LA CNRS 253. ISEN, 3 Rue François Buës, F-59046 Lille Cedex, France
Abstract:A recent proposal by Duke and Ford (Surface Sci. 111 (1981) L685) of strong correlations at the metastable (1× 1) Si(111) surface is shown to be equivalent to our earlier theory of magnetic or charge instabilities at this surface. It is recalled how this can be discussed from a perturbation analysis. Estimates of the Coulomb parameter U are given using recent theoretical results for dangling bond states in silicon. They support the conclusion of an antiferromagnetic 2 × 1 ground state for this surface.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号