New method to induce 2D–3D transition of strained CdSe/ZnSe layers

We present new growth conditions for growing high-quality CdSe/ZnSe quantum dots with photoluminescence emission measurable up to room temperature. The surface morphology is characterized in situ by Reflective High Energy Electron Diffraction (RHEED). The key point is the introduction of a new step in the growth process using amorphous selenium to induce a 2D–3D transition of a CdSe strained layer on ZnSe to form the dots. Optical characterizations by photoluminescence of CdSe/ZnSe quantum dots obtained that way, as well as X-ray diffraction results are also discussed here.