Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height |
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Authors: | M G kcen M Yildirim |
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Institution: | Department of Physics, Faculty of Arts and Sciences, Düzce University, Düzce, Turkey |
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Abstract: | Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by thermionic emission (TE) theory. Zero-bias barrier height (ΦB0) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that ΦB0 increases with temperature increasing, whereas n decreases. Obtained temperature dependence of ΦB0 and linearity in ΦB0 versus n plot, together with lower barrier height and Richardson constant values obtained from Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height. |
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Keywords: | Bi4Ti3O12 I-V characterization temperature dependence Gaussian distribution |
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