TIAN Kai CAO Zhou XUE Yu-XiongYANG Shi-Yu Lanzhou Institute of Physics,National Laboratory of Vacuum & Cryogenics Technology , Physics,Lanzhou 730000,China
Abstract:
Heavy ions and pulsed lasers are important means to simulate the ionization damage effects on semiconductor materials. The analytic solution of high-energy heavy ion energy loss in silicon has been obtained using the Bethe-Bloch formula and the Kobetich-Katz theory, and some ionization damage parameters of Fe ions in silicon, such as the track structure and ionized charge density distribution, have been calculated and analyzed according to the theoretical calculation results. Using the Gaussian function and...