Microstructure of hydrogenated silicon thin films prepared from silane diluted with hydrogen |
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Authors: | J Müllerová P Šutta M Zeman |
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Institution: | a Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of ?ilina, ul. kpt. J. Nálepku 1390, 031 01 Liptovský Mikuláš, Slovakia b New Technologies, Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Plzeň, Czech Republic c Delft University of Technology, ECTM/DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands d Faculty of Chemical and Food Technology, Slovak Technical University, Radlinského 9, 812 37 Bratislava, Slovakia |
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Abstract: | We report results obtained from FTIR and TEM measurements carried out on silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen. The hydrogen content, the microstructure factor, the mass density and the volume per Si-H vibrating dipoles were determined as a function of the hydrogen dilution. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (μc-Si:H). With increasing dilution the transition from amorphous to microcrystalline phase appears faster and the average mass density of the films decreases. The μc-Si:H films are mixed-phase void-rich materials with changing triphasic volume fractions of crystalline and amorphous phases and voids. Different bonding configurations of vibrating Si-H dipoles were observed in the a-Si:H and μc-Si:H. The bonding of hydrogen to silicon in the void- and vacancy-dominated mechanisms of network formation is discussed. |
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Keywords: | 78 66 Jg 68 55 &minus a 78 30 &minus j 81 40 &minus z |
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