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a-SiOx : H thin film light emitting devices for Si-based optoelectronics |
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| Authors: | M C Rossi S Salvatori F Scrimizzi F Galluzzi R Janssen and M Stutzmann |
| Institution: | a Dipartimento Ingegneria Elettronica and INFM, Università di Roma Tre, V. Vasca Navale 84, 00146 Roma, Italy b Walter Schottky Institute, Technical University of Munich, Am Coulombwall, Garching, Germany |
| Abstract: | Electrical and optoelectronic characterization of p–i–n devices based on a-SiOx : H thin film alloys is presented. It is shown that near infrared electroluminescence can be obtained for applied fields higher than a typical threshold depending on the p/i and n/i interface structure. Electroluminescence (EL) intensity under AC excitation is independent of frequency up to 20 kHz and exhibits rise and decay times of about 10 μs. Optical properties of a-SiOx : H materials allow the integration of LED devices and optical waveguides, which can be coupled to planar silicon detectors for obtaining Si-based optoelectronic circuits. |
| Keywords: | a-SiOx : H Thin film alloy Light-emitting device Electroluminescence |
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