Microwave photoresistance of a double quantum well at high filling factors |
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Authors: | A A Bykov D R Islamov A V Goran A I Toropov |
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Institution: | (1) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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Abstract: | The effect of millimeter wave radiation on the electronic transport in a GaAs double quantum well at a temperature of 4.2 K in a magnetic field of up to 2 T has been studied. Resistance (conductance) oscillations have been shown to appear in the two-dimensional electronic system under investigation at high filling factors. The magnetic field positions of the oscillation maxima are determined by the condition ΔSAS/? = lωc, where ΔSAS = (E 2 ? E 1) is the size quantization sublevel splitting in the quantum well, ωc is the cyclotron frequency, and l is a positive integer. It has been found that the microwave field substantially modifies the oscillations in the double quantum well, which results in alternating two-frequency oscillations of photoresistance with the inverse magnetic field. |
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