Controlling the charging energy of arrays of tunnel junctions |
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Authors: | C Kurdak A J Rimberg T R Ho John Clarke J D Walker |
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Institution: | a Department of Physics, University of California, Berkeley, CA 94720, USA;b Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;c Lawrence Livermore National Laboratory, Livermore, CA 94550, USA |
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Abstract: | We describe a new technique to control in situ charging energy of systems of coupled metallic or superconducting islands. To illustrate the technique, we have fabricated two-dimensional arrays of Al islands on GaAs/AlAs heterostructures. Each island is coupled to its nearest-neighbor by a submicron Al/AlOx/Al tunnel junction and to the three-dimensional electron gas (3DEG) located below the surface of the heterostructure by a capacitance Cg. We vary Cg, which dominates the charging energy of the array, by depleting the electrons in the 3DEG by means of a negative voltage applied to the array. With the array driven normal by a magnetic field, a decrease in Cg increases in both the offset voltage and the period of the Coulomb blockade oscillations. |
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Keywords: | Josephson junction array Charging energy Three-dimensional electron gas |
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