Quantitative electron-probe microanalysis of light elements: Determination ofa-Si∶C∶N∶O∶H insulating films

Amorphous SiCNOH films (1–3 m) are studied by EPMA after deposition of gold (1–5 nm) as a conductive coating. Its influence on thek-ratios (X-ray intensity relative to an uncoated standard) of silicon, carbon, nitrogen and oxygen is described as a linear function of the simultaneously determinedk-ratio of gold. Thek-ratios representing the uncoated specimen are obtained by extrapolation and, in combination with the PAP matrix correction model, quantitative EPMA can be performed with an analytical error of 2–5%, as it is demonstrated by samples of SiC, Si₃N₄ and SiO₂. No systematic shift of the concentrations is observed for layers ofa-SiCNOH determined at various electron energies of 5–12.5 keV. Hydrogen is calculated by difference and the concentrations prove to be a useful estimate in agreement with the results of chemical analysis. Si-K/Si-K spectra recorded on organo-silicon films and binary silicon compounds point out significant differences concerning the formation of Si-C, Si-N and Si-O chemical bonds.