Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization |
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Authors: | CHEN Li-Jun WANG De-Yong ZHAN Qing-Feng HE Wei LI Qing-An |
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Affiliation: | State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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Abstract: | We present the magnetoresistance measurements of ultrathin Mn5Ge3}$ films with different thicknesses at low Temperatures. Owing to the lattice mismatch between Mn5Ge3 and Ge (111), the thickness of Mn5Ge3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn5Ge3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5Ge3 film is a potential material for spin injection. |
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Keywords: | 73.20.Fz 73.43.Qt |
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