|
|||||
|
|
Physicochemical and electrochemical properties of Gd3+-doped ZnSe thin films fabricated by single-step electrochemical deposition process |
|
| Authors: | Rajesh Kumar T. Prabukanthan P. Harichandran G. Theerthagiri J. Tatarchuk Tetiana Maiyalagan T. Maia Gilberto Bououdina M. |
| Affiliation: | 1.Materials Chemistry Laboratory, Department of Chemistry, Muthurangam Government Arts College, Vellore, 632002, India ;2.Department of Polymer Science, University of Madras, Guindy Campus, Chennai, 600025, India ;3.Centre of Excellence for Energy Research, Sathyabama Institute of Science and Technology (Deemed to be University), Chennai, 600119, India ;4.Department of Pure and Applied Chemistry, Vasyl Stefanyk Precarpathian National University, 57, ShevchenkoStr., Ivano-Frankivsk, 76018, Ukraine ;5.SRM Research Institute, Department of Chemistry, SRM University, Kattankulathur, Chennai, 603203, India ;6.Institute of Chemistry, UFMS, Campo Grande, Mato Grosso do Sul, 79074-460, Brazil ;7.Department of Physics, College of Science, University of Bahrain, PO Box 32038, Sakhir, Kingdom of Bahrain ; |
| Abstract: | Journal of Solid State Electrochemistry - Gd3+ (gadolinium)-doped ZnSe thin films (1 to 5 mol%) are grown onto indium-doped tin oxide (ITO) glass substrate by single-step electrochemical... |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |