| Abstract: | Herein, novel random copolymers PMNN and PMNB were designed and synthesized, and the memory devices Al/ PMNN and PMNB /ITO both exhibited ternary memory performance. The switching voltages of the OFF–ON1 and ON1–ON2 transitions for both memory devices are around −2.0 and −3.5 V, respectively, and the ON1/OFF, ON2/ON1 current ratios are both up to 103. The observed tristable electrical conductivity switching could be attributed to field‐induced conformational ordering of the naphthalene rings in the side chains, and subsequent charge trapping by 1,8‐naphthalimide moieties. More interestingly, by adjusting the connection sites of 1,8‐naphthalimide moieties to tune the steric‐twist effect, different memory properties were achieved ( PMNN showed nonvolatile write once, read many (WORM) memory behavior, whereas PMNB showed volatile static RAM (SRAM) memory behavior). This result will offer a guideline for the design of different high‐performance multilevel memory devices by tuning the steric effects of the chemical moieties. |
