Influence of the metal nanofilm-semiconductor interface on surface properties of the nanofilm: The CO-Yb-Si(111) system |
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Authors: | M. V. Kuz’min M. A. Mittsev |
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Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
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Abstract: | The influence of the “ytterbium nanofilm-single-crystal silicon substrate” interface on properties of the films has been investigated. It has been shown that, if the film thickness is less than 10 monolayers, the Friedel oscillations (standing waves of electron density) generated by the interface affect the work function of the films and the rate of adsorption of CO molecules on their surface. In turn, the CO molecules modify the electronic structure of ytterbium during adsorption on the surface of nanofilms by transforming ytterbium from the divalent to trivalent state. The completely filled layer of adsorbed CO molecules consists of two phases. The first phase is a two-dimensional gas whose molecules weakly interact with each other, but their lone electron pairs form a donor-acceptor bond with the Yb 5d level; as a result, this level is located below the Fermi level and the metal transforms into the trivalent state. After filling the two-dimensional phase, the second (island) phase, in which the CO molecule are bound by horizontal π-bonds, begins to grow. The formation of these bonds becomes possible due to the filling of 2π states in the molecules upon compaction of the adsorbed layer. The considered the adsorbed two-phase layer is responsible for the complete transition of ytterbium into the trivalent state. |
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