Chaotic potential on semiconductor boundary under conditions of the partial self-organization of the surface ion charge

The possibility of varying the parameters of electrostatic chaotic potential on a semiconductor surface with the association of point defects is investigated. Two models of surface dipole structures are considered. The amplitude and type of chaotic potential spread are determined under conditions of the partial self-organization of the ion charge. A reduction in the degree of chaos is obtained that depends on a structural parameter of a system of dipoles (their surface concentration).