Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy |
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| Authors: | Alexandre F Benchimol JL Dangla J Dubon-Chevallier C Amarger V |
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| Institution: | CNET, Lab. de Bagneux, France; |
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| Abstract: | The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm/sup 2/ is obtained for a beryllium base doping as high as 8*10/sup 19/ cm/sup -3/. The base sheet resistance of 140 Omega / Square Operator is among the lowest reported values.<> |
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