Theoretical analysis of the gate capacitance inn-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a quantizing magnetic field |
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| Authors: | K P Ghatak M Mondal |
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| Institution: | (1) Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, 700009 Calcutta, India;(2) Present address: Centre of Advanced Study in Radio Physics and Electronics, 1 Girish Vidyaratna Lane, 700009 Calcutta, India |
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| Abstract: | An attempt is made to study theoretically, the dependence of the gate capacitance inn-channel inversion larges on ternary chalcopyrite semiconductors on a quantizing magnetic field, takingn-channel inversion layers on CdGeAs2 as an example. It is found, on the basis of a newly derived electron energy spectrum of the above class of semiconductors, that the gate capacitance exhibits spiky oscillations with changing magnetic field and the oscillatory behaviour is in qualitative agreement with the experimental observation reported in the literature for the MOS structure of Hg1–x
Cd
x
Te. |
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