Cd1-xZnxTe在高压下的电学性质、状态方程与相变

 在金刚石压砧装置上，采用电阻和电容测量方法研究了Cd_1-xZn_xTe（x=0.04）在室温下、17 GPa内的电阻、电容与压力的关系。实验结果表明，它在3.1 GPa左右和5 GPa左右发生了两次电子结构相变，而在3.1 GPa以上和5.7 GPa左右发生了两次晶体结构相变。同时，还在活塞-圆筒测量装置上研究了Cd_1-xZn_xTe（x=0.04）在室温下、4.5 GPa内的p-V关系。实验结果表明它在3.8 GPa左右发生了相变。本工作还给出了它在相变前后的状态方程，以及它的Grüneisen参数γ₀、体弹模量B₀ 与B₀ 的压力导数B₀′。

Cd1-xZnxTe ELECTRICAL PR OPERTIES,THE EQUATION OF STATE AND PHASE TRANSITIONS UNDER HIGH PRESSURE

Resistance-and capacitance-pressure relationships for Cd_1-xZn_xTe (x=0.04) at room temperature and in the pressure range up to 17 GPa were measured in a diamond anvil cell. Experimental results indicate that Cd_1-xZn_xTe (x=0.04) undergoes two electronic structure transitions at about 3.1 GPa and 5 GPa, and two crystal structure transitions at above 3.1 GPa and about 5.7 GPa. p-V relationship for Cd_1-xZn_xTe (x=0.04) at room temperature and in the pressure range up to 4.5 GPa was also obtained using a piston-cylinder type device. Experimental results show that a phase transition in Cd_1-xZn_xTe (x=0.04) occurs at about 3.8 GPa. Its equations of state before and after the phase transition, Grüneisen parameter γ₀, bulk modulus B₀ and the first order pressure derivative B₀′ of B₀ are also given.