Application of High Pressure-DTA for High Pressure-liquid Phase Epitaxy of Doped Mercury and Thallium HTS Formations |
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| Authors: | Łada T. Przybylski K. Morawski A. Prażuch J. Brylewski T. |
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| Affiliation: | (1) High Pressure Research Centre, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland;(2) Faculty of Material Science and Ceramics, Department of Solid State Chemistry, University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Cracow, Poland |
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| Abstract: | The fabrication method of superconducting thin films of compositions HgBa2Ca2Cu3O8+δ (Hg-1223) and Tl2Ba2CuOy (2201) on single-crystalline SrTiO3 and LaAlO3 substrates is reported. The highest obtained T c was 134 K and J c over 106 A cm–2 at 77 K. High pressure DTA(HP-DTA) was applied to grow mercury- and thallium-based high-temperature superconducting crystals and thin films, to identify melting points of particular phases within these oxide systems and determine suitable processing conditions. The DTA system operates at the: maximum temperature of 1200°C, volume up to 5 cm3, working pressure up to 1.5 GPa and at a working atmosphere — inert gas with up to 25% oxygen. This revised version was published online in August 2006 with corrections to the Cover Date. |
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| Keywords: | HBCCO high pressure high temperature DTA liquid phase epitaxy mercury-based HTS TBCCO thallium-based HTS |
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