Growth and properties of YAlO film synthesized by RF magnetron sputtering |
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| Authors: | Keiko Matsunouchi Naoyoshi Komatsu Chiharu Kimura Hidemitsu Aoki Takashi Sugino |
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| Affiliation: | Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Japan |
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| Abstract: | YAlO films are synthesized on (1 0 0)-oriented Si substrates by RF magnetron sputtering method. Al2O3 wafer is used as a target material, and some small pieces of Y bulk material are put on the Al2O3 target to synthesize YAlO films. Y composition ratio is varied from 0 to 34%. Amorphous YAlO films are characterized. An electrical resistivity as high as 3.4 × 1014 Ω-cm is achieved for the YAlO film with Y composition ratio of 10%. The dielectric constant increases with increasing Y composition ratio, and the YAlO film with Y composition ratio of 34% has a dielectric constant of 10.2. The bandgap energy of the YAlO film is suggested to be wider than 6.5 eV. YAlO films with a surface roughness of 0.4-1.3 nm are obtained irrespective of the Y composition ratio. |
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| Keywords: | YAlO film Al2O3 Y2O3 High-K Wide bandgap semiconductor |
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