Au-assisted electroless etching of silicon in aqueous HF/H<sub>2</sub>O<sub>2</sub> solution期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Au-assisted electroless etching of silicon in aqueous HF/H₂O₂ solution

Authors:	Nacé ra Megouda,Gaë lle Piret,Omar Elkechai

Affiliation:	^a Faculté des Sciences, Université Mouloud Mammeri, Tizi-Ouzou, Algeria ^b Unité de Développement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger, Algeria ^c Institut de Recherche Interdisciplinaire (IRI, USR 3078) and Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN, CNRS-8520), Cité Scientifique, Avenue Poincaré - B.P. 60069, 59652 Villeneuve d’Ascq, France

Abstract:	The Au-assisted electroless etching of p-type silicon substrate in HF/H₂O₂ solution at 50 °C was investigated. The dependence of the crystallographic orientation, the concentration of etching solution and the silicon resistivity on morphology of etched layer was studied. The layers formed on silicon were investigated by scanning electron microscopy (SEM). It was demonstrated that although the deposited Au on silicon is a continuous film, it can produce a layer of silicon nanowires or macropores depending on the used solution concentration.

Keywords:	62.23.Hj 68.37.Hk 81.65.cf 82.45.jn
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