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Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution |
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| Authors: | Nacéra Megouda Gaëlle Piret Omar Elkechai |
| Institution: | a Faculté des Sciences, Université Mouloud Mammeri, Tizi-Ouzou, Algeria b Unité de Développement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger, Algeria c Institut de Recherche Interdisciplinaire (IRI, USR 3078) and Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN, CNRS-8520), Cité Scientifique, Avenue Poincaré - B.P. 60069, 59652 Villeneuve d’Ascq, France |
| Abstract: | The Au-assisted electroless etching of p-type silicon substrate in HF/H2O2 solution at 50 °C was investigated. The dependence of the crystallographic orientation, the concentration of etching solution and the silicon resistivity on morphology of etched layer was studied. The layers formed on silicon were investigated by scanning electron microscopy (SEM). It was demonstrated that although the deposited Au on silicon is a continuous film, it can produce a layer of silicon nanowires or macropores depending on the used solution concentration. |
| Keywords: | 62 23 Hj 68 37 Hk 81 65 cf 82 45 jn |
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