Numerical analysis of the transport processes in manganite-titanate Schottky junctions

A numerical study is presented on the transport processes in the manganite-titanate Schottky junction by using the Poisson equation, the drift-diffusion formulas, the direct and thermally assisted tunneling model. Comparing with the experimental data, it is found that the non-monotonically temperature-dependent I-V curves under reverse bias is caused by the competition between the direct and thermally assisted tunneling processes. In addition, it is also found that the electric field dependence of the permittivity in Nb-doped SrTiO₃ plays an important role on the transport properties of the manganite-titanate Schottky junctions based on our calculation.