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Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature |
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| Authors: | Praveen Kumar Lekha Nair B.R. Mehta |
| Affiliation: | a Surface Physics and Nanostructure Group, National Physical Laboratory, New Delhi-110012, India b Department of Physics, Jamia Millia Islamia, New Delhi-110025, India c WSCD, BARCF Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India d Department of Physics, Indian Institute of Technology, New Delhi-110016, India e Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India |
| Abstract: | In the search for silicon technology compatible substrate for III-nitride epitaxy, we present a proof-of-concept for forming epitaxial SiC layer on Si(1 1 1). A C/Si interface formed by ion sputtering is exposed to 100-1500 eV Ar+ ions, inducing a chemical reaction to form SiC, as observed by core-level X-ray photoelectron spectroscopy (XPS). Angle dependent XPS studies shows forward scattering feature that manifest the epitaxial SiC layer formation, while the valence band depicts the metal to insulator phase change. |
| Keywords: | X-ray photoelectron spectroscopy Silicon carbide Ion beam induced reactions Reaction threshold |
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