Physical and electrical characteristics of a high-k Yb2O3 gate dielectric |
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Authors: | Tung-Ming Pan Wei-Shiang Huang |
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Institution: | Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, ROC |
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Abstract: | High-k ytterbium oxide (Yb2O3) gate dielectrics were deposited on Si substrate by reactive sputtering. The structural features of these films after postdeposition annealing treatment were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that the Yb2O3 gate dielectrics annealed at 700 °C exhibit a larger capacitance value, a lower frequency dispersion and a smaller hysteresis voltage in C-V curves compared with other annealing temperatures. They also show negligible charge trapping under high constant voltage stress. This phenomenon is mainly attributed to the decrease in the amorphous silica thickness. |
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Keywords: | High-k Yb2O3 Postdeposition annealing treatment Amorphous silica |
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