On the optical properties of amorphous Ge-Ga-Se-KBr films prepared by pulsed laser deposition |
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Authors: | RK Pan HZ Tao CG Lin XJ Zhao TJ Zhang |
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Institution: | a Key Laboratory of Silicate Materials Science & Engineering (Wuhan University of Technology), Ministry of Education, Wuhan 430070, P.R. China b School of Materials Science & Engineering, Hubei University, Wuhan 430062, P.R. China |
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Abstract: | Amorphous thin films (1 − x)(4GeSe2-Ga2Se3)-xKBr (x = 0, 0.1, 0.2, 0.3) were prepared by the pulsed laser deposition (PLD) technique. The optical parameters were calculated using the Swanepoel method from the optical transmission spectra. The optical band gap ( ) of the studied films increased while the index of refraction decreased when increased the content of KBr. The Tauc slopes were discussed as an indicator of the degree of structural randomness of amorphous semiconductors. The index of refraction decreased and increased after annealing of as-deposited films below the glass transition temperature. The thermal-bleaching and thermal- contraction effects were observed, which are discussed in relation to the reduction in the density of homopolar bonds confirmed by the Raman spectra analysis and the decreased amount of fragments of the as-deposited films, respectively. |
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Keywords: | Ge-Ga-Se-KBr films Pulsed laser deposition Optical properties Annealing |
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