Effect of filament biasing on nanocrystalline-Si films deposited by hot wire chemical vapor deposition |
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Authors: | Bibhu P. Swain Bhabani S. Swain Seung M. Yang Nong M. Hwang |
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Affiliation: | National Research Laboratory of Charged Nanoparticles, Department of Material Science and Engineering, Seoul National University, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea |
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Abstract: | Nanocrystalline silicon (nc-Si) films were deposited by hot wire chemical vapor deposition with applying positive or negative filament biases. These films were characterized by Raman spectroscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Plasmon loss of the Si(2p) band region was shifted to higher energy due to dielectric changes with applied filament biases from negative to positive voltage. A semi-quantitative study of the valence band structure was employed to analyze the bias effect of the valance band in nc-Si networks. Nc-Si with a positive filament bias shows better microstructural properties than those with a negative bias and without biasing nc-Si films. |
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Keywords: | Raman spectroscopy XPS FESEM HWCVD |
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