| A 2.4 GHz power amplifier in 0.35μm SiGe BiCMOS |
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| 引用本文： | 郝明丽,石寅.A 2.4 GHz power amplifier in 0.35μm SiGe BiCMOS[J].半导体学报,2010,31(1):65-68. |
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| 作者姓名： | 郝明丽 石寅 |
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| 作者单位： | Institute;Microelectronics;Chinese;Academy;Sciences;Semiconductors; |
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| 摘 要： | This paper presents a 2.4 GHz power amplifier(PA) designed and implemented in 0.35μm SiGe BiCMOS technology.Instead of chip grounding through PCB vias,a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB,improving the stability and the gain of the circuit.In addition,a low-pass network for output matching is designed to improve the linearity and power capability.At 2.4 GHz,a P_(1dB) of 15.7 dBm has been measured,and the small signal gain is 27.6 dB with S_(11)<-7 ...
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| 关 键 词： | 功率放大器 BiCMOS工艺 SiGe GHz 微米 BiCMOS技术 小信号增益 寄生效应 |
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