| InP(110)理解面的能带弯曲 |
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| 引用本文： | 邓宗武,郭伟民,刘焕明,曹立礼. InP(110)理解面的能带弯曲[J]. 物理化学学报, 1999, 15(4): 303-307. DOI: 10.3866/PKU.WHXB19990404 |
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| 作者姓名： | 邓宗武 郭伟民 刘焕明 曹立礼 |
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| 作者单位： | Department of Chemistry,Tsinghua University,Beijing 100084;Department of Chemistry,The Chinese University of Hongkong,Department of Physics,The Chinese University of Hongkong |
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| 摘 要： | 用XPS测得了真空解理后InP样品（110）表面能带弯曲的动态过程，并对引起InP表面能带弯曲的可能原因进行了讨论．排除了本征表面态、真空中残留气体和X射线辐射等原因，认为解理过程在表面产生的缺陷和解理后表面晶格弛像产生的缺陷可能是导致能带弯曲的原因．
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| 关 键 词： | InP 能带弯曲 动态过程 XPS |
| 收稿时间： | 1998-06-16 |
| 修稿时间： | 1998-08-26 |
Band Bending of Cleaved InP(110) Surface |
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| Deng Zongwu,Kwok Raymund W M,Lau Leo W M,Cao Lili. Band Bending of Cleaved InP(110) Surface[J]. Acta Physico-Chimica Sinica, 1999, 15(4): 303-307. DOI: 10.3866/PKU.WHXB19990404 |
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| Authors: | Deng Zongwu Kwok Raymund W M Lau Leo W M Cao Lili |
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| Affiliation: | Department of Chemistry,Tsinghua University,Beijing 100084;Department of Chemistry,The Chinese University of Hongkong|Department of Physics,The Chinese University of Hongkong |
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| Abstract: | The dynamic surface band bending of cleaved InP(110) sample was investegated using in situ XPS analysis and the causes of band bending was discussed acconiing to the experimental results. It was concluded that there is no intrinsic surface states in InP and neither the residual gas in UHV nor the X-Ray radiation causes the band bending, the band bending should be caused by the surface defects induced during the cleavage and lattice relaxation. |
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| Keywords: | InP Band bending Dynamic process XPS |
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