Effect of Si-spacer layer thickness on magnetic and magnetoresistive properties of Co/Si/Co/GaAs(0 0 1) |
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| Authors: | J. Islam Y. Yamamoto E. Shikoh A. Fujiwara H. Hori |
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| Affiliation: | School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan |
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| Abstract: | The magnetization process of Co/Si/Co/GaAs was studied as a function of Si-spacer layer thickness. Coercivity of Co/Si decreased with increasing Si-spacer layer thickness.The Hysteresis loop changed from two phases to a single phase with decreasing temperature and Si-spacer layer thickness. Magnetoresistance (MR) ratio in current-perpendicular-to-plane (CPP) configuration increased with decreasing Si-spacer layer thickness. |
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| Keywords: | 75.60.&minus d 75.47.-m |
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