具有全方位光管理能力的光阱结构

本文提出了一种基于砷化镓(GaAs)材料且具有全方位光管理能力的纳米方形光阱结构.通过光学模拟可知,该结构在较大结构参数范围内具有优异的全向光管理能力.当该结构的有效厚度为407 nm时,在AM1.5G光照下,其光电流密度可达29.51 mA/cm~2,而在同样条件下,2000 nm厚的平面GaAs结构只能产生19.80 mA/cm~2的光电流密度.由光电模拟可知,为了获得合理的高光电转换效率,应使少数载流子寿命大于等于1.0×10~(-7 )s,表面复合速率小于等于100 s/cm.

Light trapping structure with omni-directional light management capability

This paper proposes a nano square structure with omni-directional light management capability based on gallium arsenide (GaAs) materials. From optical simulation, it can be found that the structure has excellent omni-directional light management ability within a large range of structural parameters. When the effective thickness of the structure is 407 nm, its photocurrent density can reach 29.51 mA/cm2 under AM 1.5G illumination. while under the same conditions, the planar GaAs structure with a thickness of 2000 nm can only produce the photocurrent density of 19.80 mA/cm2. It can be known from photoelectric simulation that in order to obtain a reasonably high photoelectric conversion efficiency, the minority carrier lifetime should be greater than or equal to 1.0×10-7 s, and the surface recombination rate should be less than or equal to 100 s/cm.