Superheating of silicon nanocrystals observed by Raman spectroscopy

In the Raman spectra of silicon nanocrystals a new anomalous component was detected. Close to the usual first order Raman peak situated for a bulk crystal at 521 cm⁻¹ at room temperature, two peaks arise shifting towards lower energy and demonstrating a huge temperature increase, as measured by the ratio of the Stokes/anti-Stokes peak intensities. This behavior is dependent on the laser power and on the morphology of the nanocrystals. We can exclude, however, confinement effects, although surface enhanced phonon modes could be responsible of such superheating. Alternative explanations are also suggested and discussed.