Programming resistive switching memory by a charged capacitor |
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Authors: | Zhang Sen Liu Qi Wang Wei Lv Hangbing Zuo Qingyun Wang Yan Li Yingtao Lian Wentai Long Shibing Wang Qin Liu Ming |
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Institution: | (1) School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, 30332-0245 Atlanta, GA, USA;(2) Henkel Loctite (China) Co. Ltd., 5000 W. Chandler Blvd, 264006 Chandler, People’s Republic China |
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Abstract: | The performances of bulk-heterojunction (BHJ) solar cells are investigated for time-dependent thermal annealing with different
morphology evolution scales, having special consideration for the diffusion and aggregation of fullerene derivative molecules
based on blends of poly(3-hexylthiophene):6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM). Meaningfully, rapid formation of dot-like and needle-like crystalline PCBM structures
of a few micrometers up to 60 μm in size is obtained with thermal annealing treatment from 2 to 15 min, which dynamically
reflects a fast process of PCBM molecule and cluster aggregation. Upon ultrasonic-assisted processing and annealing treatment,
the scale of P3HT crystals is drastically increased in view of X-ray diffraction (XRD) patterns, leading to a high hole mobility.
And, the P3HT domains can be gradually converted into larger P3HT crystals approved by the decreased full width at half-maximum
in the XRD patterns. Corresponding current–voltage curves are measured in quantity and we propose a model to explain the effect
of the crystalline degree of P3HT domains and aggregation of PCBM molecules and clusters on the phase segregation, expressing
a viewpoint towards high performance of BHJ solar cells. |
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