Entanglement via tunable Fano-type interference in asymmetric semiconductor quantum wells

Entanglement is realized in asymmetric coupled double quantum wells (DQWs) trapped in a doubly resonant cavity by means of Fano-type interference through a tunneling barrier, which is different from the previous studies on entanglement induced by strong external driven fields in atomic media. We investigate the generation and evolution of entanglement and show that the strength of Fano interference can influence effectively the degree of the entanglement between two cavity modes and the enhanced entanglement can be generated in this DQW system. The present investigation may provide research opportunities in quantum entangled experiments in the DQW solid-state nanostructures and may result in a substantial impact on the technology for entanglement engineering in quantum information processing.