Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field |
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| Authors: | V L Al'perovich A S Terekhov V A Tkachenko O A Tkachenko N T Moshegov A I Toropov A S Yaroshevich |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia;(2) Novosibirsk State University, 630090 Novosibirsk, Russia |
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| Abstract: | The photocurrent was measured as a function of the external electric field in short-period AlAs/GaAs superlattices for various
photon energies. Transport resonances, whose positions do not depend on the photon energy, were observed in these dependences
together with optical resonances due to interband transitions in Wannier-Stark levels. It is shown that the transport resonances
are due to tunneling of photoelectrons from the p-GaAs contact region into the first level in GaAs wells located 2–5 lattice periods from the contact layer.
Fiz. Tverd. Tela (St. Petersburg) 41, 159–164 (January 1999) |
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