Features and mechanisms of growth of cubic silicon carbide films on silicon |
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Authors: | L K Orlov E A Steinman T N Smyslova N L Ivina A N Tereshchenko |
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Institution: | 1.Alekseev Nizhni Novgorod State Technical University,Nizhni Novgorod,Russia;2.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhni Novgorod,Russia;3.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka, Moscow oblast,Russia |
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Abstract: | The mechanisms and specific features of the growth of silicon carbide layers through vacuum chemical epitaxy in the range
of growth temperatures from 1000 to 700°C have been considered. The structure of the heterojunction formed has been studied
using the results of the performed investigations of photoluminescence spectra in the near-infrared wavelength range and the
data obtained from the mass spectrometric analysis. It has been found that, in the silicon layer adjacent to the 3C-SiC/Si heterojunction, the concentration of point defects significantly increases and the dislocation structure is not pronounced.
According to the morphological examinations of the surface of the growing film, by analogy with the theory of thermal oxidation
of silicon, the theory of carbidization of surface silicon layers has been constructed. A distinctive feature of the model
under consideration is the inclusion of the counter diffusion fluxes of silicon atoms from the substrate to the surface of
the structure. The growth rate of films and the activation energy of diffusion processes have been estimated. The performed
experiments in combination with the developed growth model have explained the aggregates of voids observed in practice under
the silicon carbide layer formed in the silicon matrix and the possibility of forming a developed surface morphology (the
island growth of films) even under conditions using only one flow of hydrocarbons in the reactor. |
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