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A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation
Authors:MENG Xiang-Ti HUANG Qiang MA Yan-Xiu ZHENG Yong-Nan FAN Ping ZHU Sheng-Yun Institute of Nuclear and New Energy Technology  Tsinghua University  Beijing  China China Institute of Atomic Energy  Beijing  China
Institution:[1]Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084, China [2]China Institute of Atomic Energy, Beijing 102413, China
Abstract:
Keywords:semiconductor technology  CMOS image sensor  proton irradiation  average brightness  TRIM simulation
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