Luminescence Properties of Ca2Ga2SiO7:RE Phosphors for UV White‐Light‐Emitting Diodes |
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Authors: | Dr. Mengmeng Jiao Wenzhen Lv Wei Lü Qi Zhao Baiqi Shao Prof. Hongpeng You |
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Affiliation: | 1. State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China);2. University of the Chinese Academy of Science, Beijing 100049 (China) |
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Abstract: | A series of Eu2+‐, Ce3+‐, and Tb3+‐doped Ca2Ga2SiO7 phosphors is synthesized by using a high‐temperature solid‐state reaction. The powder X‐ray diffraction and structure refinement data indicate that our prepared phosphors are single phased and the phosphor crystalizes in a tetrahedral system with the ${Pbar 42m}$ (113) space group. The Eu2+‐ and Ce3+‐doped phosphors both have broad excitation bands, which match well with the UV light‐emitting diodes chips. Under irradiation of λ=350 nm, Ca2Ga2SiO7:Eu2+ and Ca2Ga2SiO7:Ce3+, Li+ have green and blue emissions, respectively. Luminescence of Ca2Ga2SiO7:Tb3+, Li+ phosphor varies with the different Tb3+ contents. The thermal stability and energy‐migration mechanism of Ca2Ga2SiO7:Eu2+ are also studied. The investigation results indicate that the prepared Ca2Ga2SiO7:Eu2+ and Ca2Ga2SiO7:Ce3+, Li+ samples show potential as green and blue phosphors, respectively, for UV‐excited white‐light‐emitting diodes. |
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Keywords: | doping energy transfer luminescence phosphor white‐light‐emitting diodes |
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