Pattern formation of polyimide by using photosensitive polybenzoxazole as a top layer

A versatile method for positive-type patterning of polyimide (PI) based on a two-layer photosensitive poly(benzoxazole) (PSPBO) and poly(amic acid) (PAA) film has been developed to provide a promising material in the field of microelectronics. This patterning system consisted of a pristine PAA thick bottom-layer and a poly(o-hydroxy amide) (PHA) thin top layer with 9,9-bis4-(tert-butoxycarbonyl-methyloxy)phenyl]fluorene (TBMPF) as a dissolution inhibitor, and (5-propylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)-acetonitrile (PTMA) as a photoacid generator (PAG). The PHA and PAA were prepared from 4,4′-(hexafluoroisopropylidene)-bis(o-aminophenol) and 4,4′-oxybis(benzoic acid) derivatives, and 3,3′,4,4′-biphenyltetracarboxylic dianhydride and 4,4′-oxydianiline, respectively, in N,N-dimethylacetamide. This two-layer system based on PHA (150-nm thickness) and PAA (1.5-μm thickness) showed high sensitivity of 35 mJ/cm² and high contrast of 10.3 when exposed to a 365 nm line (i-line), post-baked at 100 °C for 2 min, and developed in a 2.38 wt.% tetramethylammonium hydroxide aqueous solution/5 wt.% iso-propanol at 25 °C. A clear positive image of a 4-μm line-and-space pattern was printed on a film which was exposed to 100 mJ/cm² of i-line by a contact-printing mode and fully converted to the corresponding PBO/PI pattern upon heating at 350 °C, confirmed by FT-IR spectroscopy. This two-layer system could be applied to the patterning of various PAAs.