EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals |
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Authors: | K. Germanova Ch. Hardalov |
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Affiliation: | (1) Solid State Physics Department, Sofia University, BG-1126 Sofia, Bulgaria |
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Abstract: | Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined. |
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Keywords: | 61.70 73.40 |
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